Photo by palon from unsplash
Abstract Vgmax Hot-Carrier-Injection (HCI) degradation in Multi-finger p-Laterally-Diffused Metal-Oxide-Semiconductor Field-Effect-Transistors (LDMOSFET) had been investigated by Multi-Region Direct-Current-Current-Voltage (MR-DCIV) characterization method-probing the interface state distribution along the channel, accumulation and (Shallow… Click to show full abstract
Abstract Vgmax Hot-Carrier-Injection (HCI) degradation in Multi-finger p-Laterally-Diffused Metal-Oxide-Semiconductor Field-Effect-Transistors (LDMOSFET) had been investigated by Multi-Region Direct-Current-Current-Voltage (MR-DCIV) characterization method-probing the interface state distribution along the channel, accumulation and (Shallow Trench Isolation) STI-drift region. The method feasibility was verified by device simulation and stress experiment. The enhanced interface state generation in the channel and accumulation region was clearly revealed in multi-finger layout device. This layout dependent degradation was associated with self-heating effect and temperature accelerated Vgmax HCI stress.
Journal Title: Solid-state Electronics
Year Published: 2021
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!