LAUSR

Abstract Ratio of two peaks in X-ray induced vanadium L3M23M45 Auger electron spectra has been used to monitor oxidation state of V2O3 thin film surface followed by vacuum annealing. The V2O3 film was grown with sol-gel method on the Al2O3 (0001) substrate. The O 1s, V 2p core-level X-ray photoelectron spectra and V L3M23M45 Auger electron spectra were measured from the film as function of annealing temperature. Brief exposure of the film to the air turned surface vanadium to 4+ oxidation state. Annealing in UHV at 455 K completely converted vanadium to 3+. The binding energy (BE) difference between O 1s and V 2p3/2 core-level changed from 14.0 eV to 14.9 eV as annealing temperature increased from room temperature to 455 K. Intensity ratio of the two peaks in V L3M23M45 Auger electron spectra, peak originated from O 2p region to that from V 3d region, changes from 0.91 to 0.63. In combination with measurement from VO2 film, relation between intensity ratio of V L3M23M45 doublet and the oxidation state of vanadium was established by comparison with BE difference between O 1s and V 2p3/2 core-level. V L3M23M45 Auger electron spectra can be useful tool for scanning Auger microscope (SAM) to get high spatial resolution vanadium ion distribution. A few points to consider for application toward SAM mapping have been discussed.