LAUSR

Abstract DC-sputtered TiN and TiN/Ti conductive layers grown on Si substrates were investigated as bottom electrodes with the aim of realizing phase transition VO 2 -based layered type devices. The VO 2 films prepared at a substrate temperature of 250 °C on both layers were revealed to show more than two orders of magnitude change in resistance in out-of-plane direction. However, the oxidation of TiN layer was found to degrade the out-of-plane semiconductor-metal transition (SMT) of VO 2 film in the case of VO 2 /TiN/Si structure at 400 °C. On the other hand, VO 2 film deposited on TiN/Ti/Si substrate at same temperature exhibits an abrupt out-of-plane SMT, in which oxidation of TiN layer was not observed. It was found through the X-ray photoelectron spectroscopy (XPS) depth profiles that the Ti layer played an indispensable role for avoiding oxidation of TiN, due to its high gettering effect for oxygen. Present results show advantage for introducing TiN/Ti layer as bottom electrode with high anti-oxidation ability.