LAUSR

Abstract Tin sulfide thin films were deposited on different substrates by thermal evaporation technique. The effect of substrate on the growth of SnS thin films has been studied thoroughly. X-Ray Diffractrometry pattern shows that the deposited films are showing (111) orientation having primitive type orthorhombic structure and those deposited on glass/ZnO:Al has better crystallinity and less dislocation density than the others. Small cracks are visible on the surface and that may be due to the higher dislocation density or strain exerted on the surface. Different types of substrate also shifts the absorption edge of the films deposited on different substrates. Electrical characteristics obtained from Hall Effect measurements show the films deposited on glass/ZnO:Al has better mobility and less resistivity than the films deposited on other substrates. Electric potential-current characteristics shows ohmic and rectifying behavior as the substrate is changed.