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Abstract In this work, the fabrication and characterization of fully solution-processed flexible Metal-Insulator-Semiconductor (MIS) diodes are presented. The MIS structure was fabricated using aluminum doped zinc oxide and spin-on glass… Click to show full abstract
Abstract In this work, the fabrication and characterization of fully solution-processed flexible Metal-Insulator-Semiconductor (MIS) diodes are presented. The MIS structure was fabricated using aluminum doped zinc oxide and spin-on glass as semiconductor and insulator, respectively. The maximum temperature used was 200 °C. The electrical characteristics of the flexible devices show a good agreement with the typical characteristics of a semiconductor diode even while bent to 5 mm tensile radius.
Journal Title: Thin Solid Films
Year Published: 2018
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