Photo by kellysikkema from unsplash
Abstract Controlled spalling in (100)-oriented germanium using a nickel stressor layer shows promise for semiconductor device exfoliation and kerfless wafering. Demonstrated spall depths of 7–60 μm using DC sputtering to deposit… Click to show full abstract
Abstract Controlled spalling in (100)-oriented germanium using a nickel stressor layer shows promise for semiconductor device exfoliation and kerfless wafering. Demonstrated spall depths of 7–60 μm using DC sputtering to deposit the stressor layer are appropriate for the latter application but spall depths
Keywords:
spalling 100;
100 oriented;
increased fracture;
controlled spalling;
oriented germanium
Journal Title: Thin Solid Films
Year Published: 2018
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!
Journal Title: Thin Solid Films
Year Published: 2018
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!