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Abstract The influence of annealing atmosphere on the crystallization behavior of amorphous structure in a-Si1-xGex thin films was studied with Raman spectroscopy. We annealed a-Si1-xGex (x = 0, 0.14, 0.27) thin films… Click to show full abstract
Abstract The influence of annealing atmosphere on the crystallization behavior of amorphous structure in a-Si1-xGex thin films was studied with Raman spectroscopy. We annealed a-Si1-xGex (x = 0, 0.14, 0.27) thin films at 800 °C under various atmosphere and observed change in Raman spectra. We confirmed that nitrogen-annealing atmosphere promotes crystallization of the a-Si film, however, the crystallization was not promoted in the annealing under Ar atmosphere and in vacuum. In the case of a-Si thin films containing Ge atoms, the crystallization in the a-Si1-xGex (x
Journal Title: Thin Solid Films
Year Published: 2018
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