Abstract Nonlinear optical rectification in symmetric coupled AlxGa1−xAs/GaAs quantum wells with external electric field is investigated using numerical method and compact density matrix approach. Our results reveal that for the… Click to show full abstract
Abstract Nonlinear optical rectification in symmetric coupled AlxGa1−xAs/GaAs quantum wells with external electric field is investigated using numerical method and compact density matrix approach. Our results reveal that for the resonant peaks of optical rectification, a blue shift is exhibited for increasing electric field, while a red shift followed by a blue shift is exhibited for increasing barrier or well widths. The resonant peak values of optical rectification can reach a maximum value by an appropriate choice for the electric field, the barrier or well widths. Our studies pave the way for the design, optimization and applications of quantum-sized nonlinear optoelectronic devices.
               
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