LAUSR

Abstract The fabrication of orthorhombic barium disilicide (BaSi2) thin-films on modified germanium (Ge) substrates by thermal evaporation method was demonstrated, in which the surface modification of Ge substrate was performed by a simple chemical etching method. The effects of etching time on crystalline quality and optical properties of the BaSi2 films were investigated. The results revealed that the substrate modification has positive impact in improving the crystalline quality, reducing the light reflection, and increasing the absorption of the BaSi2 thin-films. Etching time was optimized at 15 min, considering the trade-off between crystalline quality and optical properties. Minority carrier-lifetime of the evaporated film on Ge substrate achieved 3.17 μs, which is among the high value obtained for thin BaSi2 films.