LAUSR

Abstract The energy-storage performance and piezoelectric properties were determined for epitaxial antiferroelectric (AFE) PbZrO3 (PZ), ferroelectric (FE) PbZr0.52Ti0.48O3 (PZT), and relaxor ferroelectric (RFE) Pb0.9La0.1Zr0.52Ti0.48O3 (PLZT) thin films that were deposited on to SrTiO3 buffered Si substrates. The films were investigated by directly measuring the polarization hysteresis loops and piezoelectric strain curves. The square polarization loop with a high remanent polarization and a large piezoelectric coefficient obtained in PZT thin films allow them to be useful for various applications in ferroelectric field effect transistors and/or in MEMS actuators. Meanwhile, there is a jump of about 0.9% in the strain curve of PZ thin films around the field-induced AFE-FE phase transition, which is useful in digital displacement transducers due to a good ON/OFF strain state. The large recoverable energy-storage density, excellent energy-storage efficiency, and low strain hysteresis due to a slim hysteresis loop combine to make PLZT thin films as a potential candidate for a broad range of applications from energy storage to nano-positioning precision systems.