LAUSR

Abstract Single-crystal copper films on sapphire have recently been reported upon in relation to graphene growth on these films. In the present paper the kinetics of the formation of single crystal copper films is investigated. We demonstrate the importance of heating the sapphire substrate in 1000 hPa oxygen, followed by a fast cooling prior to depositing the copper film. The importance of this treatment is tentatively explained by the dissolution of oxygen in sapphire and subsequent out-diffusion during recrystallization of the copper film to form a copper-oxide interface layer. Also, the importance of avoiding oxygen incorporation in the sputter deposited film is demonstrated.