LAUSR

Abstract For the integration of the thermoelectric and magneto resistive active material (Ca2CoO3)0.62CoO2 (Ca3Co4O9) into silicon technology it is mandatory to provide, apart from diffusion barriers and epitaxial growth, electrical contacts with minimal electrical resistance between this oxide and the metal contact. Epitaxial Ca3Co4O9 thin films were grown by pulsed laser deposition on yttria stabilized zirconia (Y2O3)0.09(ZrO2)0.91 (YSZ) and Ir metallized YSZ buffered single crystalline (001)-Si substrates. X-ray diffraction pole figures of these multilayer systems reveal that the Ca3Co4O9 thin film exhibit a 12-fold in-plane rotational symmetry grown on a (001)-Ir and (001)-YSZ surface, but mutually rotated by 15 ∘ . Ir-Ca3Co4O9 thin film electrical contacts were fabricated by lateral structuring and overgrowth to allow 4-wire measurements for determining the pure Ir-Ca3Co4O9 contact current-voltage characteristic and the area specific contact resistance (ASR). We demonstrate, that the Ca3Co4O9/Ir/YSZ and Ca3Co4O9/YSZ layer system allows to realize low ASR, low in-plane electrical resistivity of the Ca3Co4O9 thin film while maintaining a high Seebeck coefficient.