LAUSR

Abstract Lithium doped cuprous oxide ( C u 2 O : L i ) films were deposited on quartz substrates by direct current magnetron reactive co-sputtering of copper and C u : L i targets. X-ray diffraction (XRD), secondary ion mass spectrometry (SIMS), Rutherford backscattering spectrometry, UV-VIS transmittance, and room temperature Hall measurements have been conducted to characterize the deposited films. SIMS revealed Li concentrations in the range 2 × 10 18 − 5 × 10 20 c m − 3 in the doped films. XRD confirms phase pure C u 2 O for all doping concentrations. The doping concentration correlates with an increased free carrier density found from Hall effect measurements. The highest Li doping concentration results in low resistivity ( 4 Ω c m ) p-type C u 2 O with acceptor concentrations up to 2 × 10 17 c m − 3 .