LAUSR

Abstract SnS thin films were prepared using a simple two-stage process. The two-stage process involved in sputtering of Sn over glass substrate followed by sulfurization of sputtered Sn at 350 °C. The sulfurization process was carried out in the ambience of sulfur for different time lengths, 10–120 min and its influence on physical properties are reported. XRD study showed that the films sulfurized at 10 min were poor in crystallinity with reflections of un-reacted tin and sulfur. As the sulfurization time (St) is increased to 60 min, a single phase orthorhombic SnS was observed with (111) preferred plane. Four distinct Raman modes at 95, 163, 190 and 220 cm−1 confirms the formation of SnS for St > 30 min, however, St