LAUSR

Abstract In this work, the impacts of different precursors on Cu2SnS3 thin film solar cells were investigated in detail. The two kinds of precursors of CuS/Sn and Cu/Sn were deposited on Mo-coated soda lime glasses by magnetron sputtering. Cu2SnS3 (CTS) films based on different precursors were fabricated by soft annealing and following sulfurization in S vapor. The crystal structure, phase purity, composition, surface morphology and cross section images of CTS films from different precursors were characterized by X-ray diffraction (XRD), Raman spectroscopy, energy dispersive spectrometry (EDS) and scanning electron microscope (SEM) respectively. Meanwhile, the optical-electrical properties of CTS thin films were detected by using UV–vis–INR Spectrophotometer and Hall measurement. As a result, the CTS thin films with smooth surface and uniform compositional ratio distribution were obtained from the precursors of CuS/Sn. The best conversion efficiency of the fabricated CTS film solar cell based on CuS/Sn precursors was 1.18% with a high open-circuit voltage of 299 mV.