LAUSR

Abstract High-quality Ga0.86In0.14Sb ingots (Φ25 × 100) were prepared with vertical Bridgman method (VB) applied a rotating magnetic field (RMF). The microstructure and properties of the ingots were characterized with X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), metallographic microscopy, and a Hall Effect testing system. RMF improved the crystallinity of the samples, reducing the full width at half maximum (FWHM) of the XRD characteristic peak of the GaInSb ingot from 214″ to 74". RMF significantly also reduced both of the radial and axial segregation of indium in the GaInSb crystal. The radial segregation in a 25–75 mm axial section decreased to 0.085 mol% from 0.247 mol% per mm, and the axial segregation to 0.047 mol% from 0.140 mol% per mm. RMF decreased the dislocation density (or the etch pit density; EPD) from 1.047 × 105 cm−2 to 6.988 × 103 cm−2. It also improved the electrical properties of the crystal, with the average value of the axial carrier mobility increasing from 1.437 × 103 cm2/(V·s) to 1.618 × 103 cm2/(V·s) and the average value of the axial resistivity reducing from 1.352 × 10−3 Ω·cm to 1.162 × 10−3 Ω·cm. Finally, the uniformity of the axial carrier mobility and resistivity also improved significantly.