LAUSR

Former scintillator based CMOS camera systems with a classical three transistor (3T) pixel design already proved their usefulness several years ago [1] and may still have the edge over direct detection sensors for certain applications, such as low voltage microscopy [2] and imaging conditions with high beam current densities [3]. By leveraging recent progress of the semiconductor industry, manufacturing of an updated sensor with a 4T pixel design is now feasible for the large sensor dimensions required in TEM. We report on the performance of such a novel scintillator based CMOS detector with a selectable full-well capacity for optimizing both, low noise and high dynamic range applications, on-chip correlated double sampling for reduced kTC (or reset) noise and a high frame rate at true 16 bit digitization.