LAUSR

Atom probe tomography (APT) is a powerful characterization technique for obtaining three-dimensional structure and materials composition at the near atomic scale. It is also a complementary with other analysis techniques, such as transmission electron microscopy (TEM). In tandem, the two techniques provide a detailed characterization of structure and chemistry. APT specimens are typically prepared using a dual beam focused ion beam (DB-FIB), which is an efficient tool for removing a substantial amount of material, and in situ electron beam imaging allows more control when shaping the APT specimen tip [1]. However, Ga-induced damage and implantation from FIB milling can result in ambiguous results, especially for Al/Al alloys [2] and Ga containing materials [3]. Low energy (< 1 keV) Ar milling has been shown to improve TEM specimen quality by removing Ga damage and implantation from FIB preparation [4-5]. Here, we present the use of small beam (< 1 μm), low energy Ar milling for the removal of FIB-induced damage from APT specimens.