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Graphene, a single-atomic-layer of carbon with a hexagonal lattice structure, has outstanding electrical and mechanical properties as well as excellent thermal and chemical stabilities. This makes graphene as a potential… Click to show full abstract
Graphene, a single-atomic-layer of carbon with a hexagonal lattice structure, has outstanding electrical and mechanical properties as well as excellent thermal and chemical stabilities. This makes graphene as a potential candidate as an atomically-thin diffusion barrier for Cu interconnects in back-end-of-line (BEOL) processes in Si integrated circuit technologies [1]. To explore graphene’s capability for this technological application, presented here is a comparative study of the effects of annealing on the Cu/Graphene/Si multilayer thin film and the Cu/Si thin film.
Journal Title: Microscopy and Microanalysis
Year Published: 2019
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