LAUSR

Since the mid-1950s, Chalcogenide glasses (ChG) have been a center of interest for the researchers because up to 5 % impurities do not affect their electrical performance, they are radiaion hard and have various optical properties [1]. Based on these properties, chalcogenide glasses offer a wide range of applications, including phase change memory [3], temperature sensing [4], infrared laser power delivery, high-speed communications, ultra-fast switching [5]. A radiation sensing device based on Ag diffusionon in GexSe100-x (x=30, 20) chalcogenide glass thin vacuum evaporated films have been reported recently [6-7]. Undoped GexSe100-x ChG has higher resistivity. When UV light is introduced into a double film of silver and GexSe1-x chalcogenide glass film, Ag metal atoms react with UV light induced photons and create Ag+ ions which drift into the undoped ChG and increase films conductivity [6-9]. Ge-Se based chalcogenide glasses were chosen because Ag has a higher diffusivity rate in them [7] and Ag ions have a very high mobility in it.