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The shape of p-n junction is an important information in order to evaluate the semiconductor devices, which has been observed by electron Lorentz microscopy [1], holography [2] and differential phase… Click to show full abstract
The shape of p-n junction is an important information in order to evaluate the semiconductor devices, which has been observed by electron Lorentz microscopy [1], holography [2] and differential phase contrast method [3] using dedicated equipment in a limited condition. Alternative quick method is required as an industrial point of view. 2D distribution of p-n junction in an InP laser device is evaluated by using Shadow Image Distortion (SID) method [4, 5] in a conventional transmission electron microscope (TEM) equipped with a thermal emission gun. As the results of obtained pair of images, not only the shape but also the vector of interface potential difference of p-n junction has been evaluated.
Journal Title: Microscopy and Microanalysis
Year Published: 2020
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