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Digenite (Cu9S5): Layered p-Type Semiconductor Grown by Reactive Annealing of Copper

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Most of the recently discovered layered materials such as MoS2 or MoSe2 are n-type, while few materials, such as phosphorene, which suffers from rapid oxidation, are p-type. To form devices… Click to show full abstract

Most of the recently discovered layered materials such as MoS2 or MoSe2 are n-type, while few materials, such as phosphorene, which suffers from rapid oxidation, are p-type. To form devices such as p–n junctions and heterojunctions, new p-type mono-/few-layers are needed. Here, we report a one-step synthesis of layered, crystalline, p-type copper sulfide by thermal annealing of a standard copper foil in an inert environment using chemical vapor deposition (CVD). Optical spectroscopies (photoluminescence and absorption) show definite correlating features around 2.5 eV. Surface photovoltage spectroscopy shows a photovoltage reduction around the same energy range, which would be expected from a bandgap of a p-type material, and p-type conductivity was also observed using a thermoelectric probe. TEM, XRD, and AFM showed that the synthesized material is layered and has a unique stoichiometry of Cu9S5. Using sonication and dropcasting, we succeeded to isolate few-layers and monolayers. We observed good bulk ele...

Keywords: digenite cu9s5; copper; layered type; cu9s5 layered; type

Journal Title: Chemistry of Materials
Year Published: 2018

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