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Chemical Design Principles for Cache-Type Sc–Sb–Te Phase-Change Memory Materials

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Enhanced crystal nucleation in a Sc–Sb–Te phase-change material has enabled subnanosecond switching in phase-change memory devices, making cache-type nonvolatile memory feasible. However, the microscopic mechanisms remain to be further explored.… Click to show full abstract

Enhanced crystal nucleation in a Sc–Sb–Te phase-change material has enabled subnanosecond switching in phase-change memory devices, making cache-type nonvolatile memory feasible. However, the microscopic mechanisms remain to be further explored. In this work, we present a systematic ab initio study of the relevant parent compounds, namely, Sc2Te3 and Sb2Te3. Despite similar bond lengths and angles in the amorphous phases of the two compounds, Sc2Te3 displays a much more ordered amorphous network without homopolar bonds. As a result, the local structural order in amorphous Sc2Te3 is dominated by square motifs, remarkably similar to those of the metastable rocksalt-like phase. Chemical bonding analysis indicates more robust Sc–Te bonds compared with Sb–Te bonds in the amorphous phase, as well as a substantial role of electrostatic interactions in Sc2Te3 but not in Sb2Te3. The robustness of Sc–Te bonds explains the enhanced nucleation in Sc–Sb–Te compounds. Finally, we discuss an alloying strategy of Sc2Te3 ...

Keywords: change memory; phase; phase change; cache type

Journal Title: Chemistry of Materials
Year Published: 2019

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