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Out-of-plane Ga2Se3 nanowires are grown by molecular beam epitaxy via Au-assisted heterovalent exchange reaction on GaAs substrates in the absence of Ga deposition. It is shown that at a suitable… Click to show full abstract
Out-of-plane Ga2Se3 nanowires are grown by molecular beam epitaxy via Au-assisted heterovalent exchange reaction on GaAs substrates in the absence of Ga deposition. It is shown that at a suitable t...
Keywords:
via assisted;
exchange reaction;
heterovalent exchange;
assisted heterovalent;
ga2se3 nanowires;
reaction gaas
Journal Title: Journal of Physical Chemistry C
Year Published: 2020
Link to full text (if available)
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Journal Title: Journal of Physical Chemistry C
Year Published: 2020
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!