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Electrical and optical characteristics of few-layered (3–4 L) chemical vapor deposition (CVD) grown MoS2, WS2, and MoS2–WS2 heterostructure-based back-gated field-effect transistor (FET) devices ha... Click to show full abstract
Electrical and optical characteristics of few-layered (3–4 L) chemical vapor deposition (CVD) grown MoS2, WS2, and MoS2–WS2 heterostructure-based back-gated field-effect transistor (FET) devices ha...
Keywords:
ws2 mos2;
mos2;
mos2 ws2;
field effect
Journal Title: Journal of Physical Chemistry C
Year Published: 2020
Link to full text (if available)
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Journal Title: Journal of Physical Chemistry C
Year Published: 2020
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!