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Band Bending of n-GaN under Ambient H2O Vapor Studied by X-ray Photoelectron Spectroscopy

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To improve the performance of semiconductor photoelectrodes for water splitting, the amount of band bending in the depletion layer of a semiconductor should be accurately ascertained, since it dete... Click to show full abstract

To improve the performance of semiconductor photoelectrodes for water splitting, the amount of band bending in the depletion layer of a semiconductor should be accurately ascertained, since it dete...

Keywords: ambient h2o; band bending; spectroscopy; bending gan; gan ambient

Journal Title: Journal of Physical Chemistry C
Year Published: 2021

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