Two prototype transition-metal dichalcogenide (TMDC) materials, MoS2 and MoSe2, have attracted growing attention as promising 2D semiconductors. The heterostructure created by stacking the 2D monolayers in the out-of-plane direction exhibits… Click to show full abstract
Two prototype transition-metal dichalcogenide (TMDC) materials, MoS2 and MoSe2, have attracted growing attention as promising 2D semiconductors. The heterostructure created by stacking the 2D monolayers in the out-of-plane direction exhibits peculiar properties that can be utilized in electronic applications. The lateral and flexural phonon transport behaviors in MoS2/MoSe2 heterobilayer are comprehensively investigated using classical molecular dynamics simulations. In-plane thermal conductivity (κ) and out-of-plane interfacial thermal resistance (R) are calculated by nonequilibrium molecular dynamics (NEMD) and transient pump–probe methods, respectively. Thermal conductivity of MoS2/MoSe2 bilayer 2D sheet is characterized as 28.8 W/m·K, which preserves the high thermal conductivity of most TMDC materials. The maximum κ reductions of MoS2, MoSe2, and heterobilayer amount to 83.0, 68.9, and 77.1%, respectively, with increasing temperatures from 100 to 500 K. It is also found that the basal-plane thermal p...
               
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