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Silicon carbide is a wide bandgap semiconductor ideally suitable for high temperature and high power applications. An active SiC layer is usually fabricated using halide-assisted chemical vapor dep ... Click to show full abstract
Silicon carbide is a wide bandgap semiconductor ideally suitable for high temperature and high power applications. An active SiC layer is usually fabricated using halide-assisted chemical vapor dep ...
Keywords:
chemical vapor;
growth mechanism;
vapor deposition;
vapor;
mechanism sic;
sic chemical
Journal Title: Journal of Physical Chemistry C
Year Published: 2018
Link to full text (if available)
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Journal Title: Journal of Physical Chemistry C
Year Published: 2018
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!