LAUSR

GeSn offers a reduced bandgap than Ge and has been utilized in Si-based infrared photodetectors with extended cutoff wavelength. However, traditional GeSn/Ge heterostructure usually consists defects like misfit dislocations due to the lattice mismatch issue. The defects with the large feature size of photodetector fabricated on bulk GeSn/Ge heterostructure induces considerable dark current. Here, we demonstrate a flexible GeSn/Ge dual-nanowire (NW) structure, in which the strain relaxation is achieved by the elastic deformation without introducing defects and the feature dimension is naturally at nanoscale. Photodetector with low dark current can be built on GeSn/Ge dual-NW, which exhibits an extended detection wavelength beyond 2 μm and the enhanced responsivity compared to Ge NW. Moreover, the dark current can be further suppressed by the depletion effect from ferroelectric polymer side gate. Our work suggests the flexible GeSn/Ge dual-NW may open an avenue for Si-compatible optoelectronic circuits operating in the short-wavelength infrared range.