LAUSR

Controllable synthesizing of one-dimensional-two-dimensional (1D-2D) heterostructures and tuning their atomic and electronic structures is nowadays of particular interest due to the extraordinary properties and potential applications. Here, we demonstrate the temperature-induced phase-controlled growth of 1D Mo6Te6-2D MoTe2 heterostructures via molecular beam epitaxy. In situ scanning tunneling microscopy study shows 2D ultrathin films are synthesized at low temperature range, while 1D nanowires gradually arise and dominate as temperature increasing. X-ray photoelectron spectroscopy confirms the good stoichiometry and scanning tunneling spectroscopy reveals the semimetallic property of grown Mo6Te6 nanowires. Through in situ annealing, a phase transition from 2D MoTe2 to 1D Mo6Te6 is induced, thus forming a semimetal-semiconductor junction in atomic level. An upward band bending of 2H-MoTe2 is caused by lateral hole injection from Mo6Te6. The work suggests a new route to synthesize 1D semimetallic transition metal chalcogenide nanowires, which could serve as ultrasmall conducting building blocks and enable band engineering in future 1D-2D heterostructure devices.