LAUSR

Ferroelectric tunnel junctions (FTJs) have recently aroused significant interest due to the interesting physics controlling their properties and potential application in non-volatile memory devices. In this work, we propose a new concept to design high performance FTJs based on the ferroelectric/polar-oxide composite barriers. Using density functional theory calculations, we model electronic and transport properties of LaNiO3/PbTiO3/LaAlO3/LaNiO3 tunnel junctions and demonstrate that an ultrathin polar LaAlO3(001) layer strongly enhances their performance. We predict a tunneling electroresistance (TER) effect in these FTJs with an OFF/ON resistance ratio exceeding a factor of 104 and ON state resistance as low as about 1 kΩμm2. Such an enhanced performance is driven by the ionic charge at the PbTiO3/LaAlO3 interface, which significantly increases transmission across the FTJ when the ferroelectric polarization of PbTiO3 is pointing against the intrinsic electric field produced by this ionic charge. This is due to the formation of a two-dimensional (2D) electron or hole gas, depending of the LaAlO3 termination being (LaO)+ or (AlO2)-, respectively, which is formed to screen the polarization charge of the non-uniform polarization state. This 2D electron (hole) gas can be switched ON and OFF by the reversal of ferroelectric polarization resulting in the giant TER effect. The proposed design suggests a new direction for creating FTJs with a stable and reversible ferroelectric polarization, a sizable TER effect and a low resistance-area product, as required for memory applications.