LAUSR

Epitaxial lateral overgrowth (ELO) over a freestanding dielectric mask is an unexplored territory in selective epitaxy growth (SEG) of semiconductors. By shrinking the dielectric mask dimension to the micron scale, the growth fronts from ELO are able to converge and coalesce, thus providing the freedom to engineer the interfacial structure between epi-layer and dielectric mask. We demonstrate herein anomalous adatoms diffusion and migration at the Ge/SiO2 interface upon SEG on Si (100) wafer. We find, depending on the oxide strip length, a polyhedral cavity or tunnel can form on the oxide layer. More importantly, we observe a thermally induced substantial internal surface reconfiguration process of Ge atoms that connects two tunnels and one cavity in order to form a single tunnel. Defect-free Ge above the oxide strips is obtained after coalescence. Our findings yields new insight into the adatoms migration in an enclosed space, and the cavity and tunnel show the first known three-dimensional geometric configuration in selective heteroepitaxial structures.