Organometallic halide perovskite materials as a potential light absorber have attracted much attention in the field of third-generation photovoltaics. The low stability and durability of perovskites have outstanding effects on… Click to show full abstract
Organometallic halide perovskite materials as a potential light absorber have attracted much attention in the field of third-generation photovoltaics. The low stability and durability of perovskites have outstanding effects on their optoelectronic properties, which causes a big obstacle in scaling up these impressive solar cells. Here, we introduce the fabrication of efficient organometallic halide perovskite devices by a simple and low-temperature vapor-assisted solution process using methylammonium bromide (MABr) to construct pinhole-free and uniform perovskite thin films. The results show that using MABr as a second evaporated precursor in the fabrication of the perovskite layer loads the Br atoms into the final MAPbI3–xBrx structure in which higher open-circuit voltage, short-circuit current density, and fill factor are achieved compared to the pure MAPbI3 perovskite structure. Perovskite solar cells based on the as-prepared films show a high power conversion efficiency of 15.34%, which presents an in...
               
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