LAUSR

Depending on the storage mechanisms, organic field-effect transistor (OFET) memory is usually divided into floating gate memory, ferroelectric memory and polymer electret-based memory. In this work, a new type of nonvolatile OFET memory is proposed by simply blending p-type semiconductor and n-type semiconductor without using extra trapping layer. The results show that the memory window can be effectively modulated by the dopant concentration of n-type semiconductor. With addition of 5% n-type semiconductor, blending devices exhibit a large memory window up to 57.7 V, an ON/OFF current ratio (ION/IOFF) ≈105 along with charge retention time over 10 years, which is comparable or even better than most of traditional OFET memories. The discontinuous n-type semiconductor is set as charge trapping center for charge storage due to the quantum well-like organic heterojunctions. The generalization of this method is also investigated in other organic systems. Moreover, the blend devices are also applied to optical memory and show multilevel optical storage which are further scaled up 8×8 array to map up 2D optical images with long-term retention and reprogramming characteristic. The results reveal that the novel system design has great potential application in the field of digital image memory and photoelectronic system.