LAUSR

The energy band gaps of Pb halide perovskites are higher than the optimal band gap required for single-junction solar cells, governed by the Shockley-Queisser radiative limit. The pure Sn and Pb-Sn mixed-based perovskites have drawn significant attention due to their ability to lead to lower band gaps and open a new door for all perovskite tandem applications. There has been continuous progress toward the rapid improvement in the power conversion efficiency of Sn and Pb-Sn mixed-based perovskite solar cells (PSCs). Along with efforts for efficiency, it is worth analyzing the in-depth recombination dynamics for further development of Sn-based PSCs. The lower bimolecular recombination rate constant (k) is often attributed to the high performance of PSCs. Herein, we study the role of "B" cations in charge carrier recombination dynamics (CCRD) of ABX3 (A = MA+, FA+, and Cs+; B = Pb2+, Sn2+, and X = I-)-based PSCs. We fabricated p-i-n configuration-based FA0.95Cs0.05PbI3 (pure Pb), MA0.20FA0.75Cs0.05SnI3 (pure Sn), and (MAPbI3)0.4(FASnI3)0.6 (Pb-Sn mixed) PSCs and compared the CCRD of all the three PSCs. We optimized the Sn-based perovskite thin film (pure Sn) in terms of moisture and thermal stability in order to minimize the error due to perovskite degradation. We note that despite having lower open-circuit voltage (VOC), a pure Sn-based PSC shows lower k than that of Pb-Sn mixed and pure Pb-based PSCs, which is a contradictory result. This slow relaxation lifetime of the charge carrier in Sn-based PSCs can be correlated with recombination through the defect states without introducing the quasi-Fermi-level splitting. Furthermore, our results suggest that the rate law of charge carrier decay has nonlinear dependence of k on n in Sn-based PSCs, whereas it is linear in the other two cases.