LAUSR

Recently explored black arsenic is a layered two-dimensional low-symmetry semiconducting material that, owing to its inherent narrow bandgap (∼0.31 eV) in its bulk form, is attractive for mid-infrared optoelectronics. Several studies have been conducted on its structural, charge-transport, and thermal properties for implementation in nanoelectronics. Herein, the thickness-dependent optoelectronic performance of black arsenic devices for mid-infrared wavelengths (2.0-4.0 μm) is investigated. The device was fabricated over an hBN/SiO2/Si substrate using mechanical exfoliation of black arsenic. It is observed that the optoelectronic properties of the devices vary significantly with the thickness of the black arsenic channel of the devices. A peak photoresponsivity of 244 A/W was achieved at 3.00 μm for a 60 nm-thick black arsenic channel. However, the maximum detectivity of 6.14 × 109 Jones was found for a lower thickness (∼25 nm) of black arsenic, along with an excellent (i.e., the least) noise-equivalent power of ∼89 fW/Hz1/2. Our findings reveal that the optoelectronic properties of black arsenic are excellent and can be tuned through thickness control. The promising results suggest the considerable potential of black arsenic in future opto- and nanoelectronic devices.