LAUSR

Perovskite solar cells (PSCs) own rapidly increasing power conversion efficiencies (PCEs), but their concentrated counterparts (i.e., PCSCs) show a much lower performance. A deeper understanding of PCSCs relies on a thorough study of the intensive energy losses of the device along with increasing the illumination intensity. Taking the low band gap Sn-Pb PCSC as an example, we realize a device-level optoelectronic simulation to thoroughly disclose the internal photovoltaic physics and mechanisms by addressing the fundamental electromagnetic and carrier-transport processes within PCSCs under various concentration conditions. We find that the primary factor limiting the performance improvement of PCSCs is the significantly increased bulk recombination under the increased light concentration, which is attributed mostly to the inferior transport/collection ability of holes determined by the hole transport layer (HTL). We perform further electrical manipulation on the perovskite layer and the HTL so that the carrier-transport capability is significantly improved. Under the optoelectronic design, we fabricate low band gap PCSCs, which exhibit particularly high PCEs of up to 22.36% at 4.17 sun.