Although the solid-state cooling technology based on electrocaloric response has been considered a promising refrigeration solution for microdevices, the mediocre dipolar entropy change ΔS impedes its practical applications. In this… Click to show full abstract
Although the solid-state cooling technology based on electrocaloric response has been considered a promising refrigeration solution for microdevices, the mediocre dipolar entropy change ΔS impedes its practical applications. In this work, ΔS of a conventional ferroelectric thin film, namely, 0.94(Bi0.5Na0.5)TiO3-0.06BaTiO3 (BNBT), was greatly improved through engineering the nanodomain structures. The number of zero-field polar states and saturation polarization were greatly increased concomitant with a weakened strength of polar correlation in the thin films, owing to the local stabilization of strongly tetragonally distorted nanoclusters (tetragonality of ∼1.25) by modulating the growth conditions during the thin film deposition process. Consequently, a giant ΔS value of ∼ -48.5 J K-1 kg-1 (corresponding to ΔT = ∼27.3 K) and a wide window of operating temperature (>70 °C) were obtained near room temperature under a moderate electric field of 1330 kV cm-1. Moreover, our engineered BNBT thin film exhibits decent fatigue endurance; i.e., a substantial electrocaloric effect over a broad span of temperature can be sustained after 5 × 107 cyclic loading of the electric field. This work provides a universal design strategy for significantly improving the close-to-room-temperature electrocaloric performance of Bi-based ferroelectric thin films without the need of compositional or architectural complexity.
               
Click one of the above tabs to view related content.