LAUSR

Nanotechnology is at the forefront of scientific research and offers great prospects for the development of technology. As a type of III-V semiconductor, GaSb materials exhibit numerous outstanding optical and electrical characteristics that are very promising for nonlinear optical device applications. In this study, the electronic band structures of GaSb are theoretically calculated, and its application in dissipative soliton fiber lasers is validated. A GaSb thin film is deposited on a microfiber using magnetron sputtering deposition, and the morphology, chemical composition, structure, and nonlinear optical characteristics of the proposed microfiber-GaSb device are investigated. After incorporating it into an Er-doped fiber laser, dissipative soliton laser pulses are readily obtained with a fundamental frequency of 43.5 MHz. With increasing pump power, the fiber laser could work in the fundamental frequency mode-locking state. At a pump power of 570 mW, the pulse width and the output power are measured to be 917 fs and 49.75 mW, separately. These results reveal that GaSb can be used as an efficient saturable absorber, which will have potential applications in ultrafast optics.