LAUSR

Since the large room-temperature anomalous Hall effect was discovered in noncollinear antiferromagnets, Mn3Sn has received immense research interest as it exhibits abundant exotic physical properties including Weyl points and enormous potential for antiferromagnetic spintronic device applications. In this work, we report the emergence of the topological Hall effect in Mn3Sn films grown on Si that is the workhorse for the modern highly integrated information technology. Importantly, through a series of systematic comparative experiments, the intriguing topological Hall effect phenomenon related to the appearance of the noncoplanar chiral spin structure is found to be induced by the Mn3Sn/SiO2 interface. Furthermore, it was found that the current injection to a Pt/Mn3Sn bilayer Hall bar device can effectively manipulate the chiral spin structure of Mn3Sn, which demonstrates the feasibility of Si-based noncollinear antiferromagnetic spintronics.