LAUSR

Buried interface modification is promising for preparing high-performance perovskite solar cells (PSCs) by improving the film quality and adjusting the interfacial energy level alignment. In this work, multifunctional ethylenediaminetetraacetic acid diammonium (EAD)-modulated ZnO is employed as an effective buried interface to regulate the interplay between SnO2 and CsPbI2Br in carbon-based inorganic PSCs (C-IPSCs). The burying of EAD into the ZnO interlayer not only enhances the photoelectric properties of ZnO by passivating oxygen defects but also adjusts the energy level alignment of the buried interface. More importantly, the perovskite quality is optimized and the buried interface defects are passivated due to the formation of coordination and hydrogen bondings. Benefiting from such a robust and efficient charge transfer configuration, a maximum power conversion efficiency of 14.58% is achieved in the optimized device, which represents the highest performance reported among those of low-temperature CsPbI2Br C-IPSCs. In addition, the unencapsulated device demonstrates better long-term and thermal stability.