LAUSR

Flexible synaptic devices with information sensing, processing, and storage functions are indispensable in the development of wearable artificial intelligence electronic systems. Here, a semiconductor/dielectric bilayer structure was prepared by a one-step deposition method and used for the first time in a flexible biomimetic photonic synaptic transistor device. Specifically, poly(3-hexylthiophene)-block-poly(phenyl isocyanide) with pentafluorophenyl ester (P3HT-b-PPI(5F)) was prepared as the device active layer, where the P3HT segment served as a carrier transport channel and optical gate and the PPI(5F) segment was used for charge trapping. Various biomimetic synaptic behaviors, such as excitatory postsynaptic currents, paired-pulse facilitation, and short-term/long-term memory, were successfully simulated under green light stimulation. An ultra-low energy consumption of 1.82 fJ was achieved with a greatly reduced operating voltage. Further, the "Morse-code" optical decoding was simulated using the excellent synaptic plasticity of the device. In addition, flexible synaptic devices were prepared by a one-step deposition method and can be well-affixed to arbitrary substrates. This has promising applications in the field of wearable bionic electronics.