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Oxygen vacancy dynamic behavior at room temperature in complex oxides was carefully explored by using a combined approach of ion liquid gating technique and resistance measurements. Heterostructures of PrBaCo2O5+δ/Gd2O3-doped CeO2… Click to show full abstract
Oxygen vacancy dynamic behavior at room temperature in complex oxides was carefully explored by using a combined approach of ion liquid gating technique and resistance measurements. Heterostructures of PrBaCo2O5+δ/Gd2O3-doped CeO2 epitaxial thin films were fabricated on (001) Y2O3-stabilized ZrO2 single crystal substrates for systematically investigating the oxygen redox dynamics. The oxygen dynamic changes as response to the gating voltage and duration were precisely detected by in situ resistance measurements. A reversible and nonvolatile resistive switching dynamics was detected at room temperature under the gating voltage >13.5 V with pulse duration >1 s.
Journal Title: ACS applied materials & interfaces
Year Published: 2018
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