LAUSR

Local manipulation of the magnetization direction is of significant importance in spintronics because it provides an effective way in nonvolatile device applications for ultrahigh density information storage. However, this modulation is usually restricted to a limited range even through large power input. We demonstrate a large rotation of the magnetization vector in a magnetic semiconductor (Ga,Mn)As (110) thin film by surface decoration of self-assembled molecules. The carrier density of the film is vastly changed by two kinds of molecules acting as electron donors and acceptors, resulting in a prominent variation of the Curie temperature and magnetic anisotropy. The magnetic anisotropic fields tuned by the molecules could be quantitatively determined by planar Hall measurements, based on which the largest rotation angle is calculated to be ∼27°. This value doubles the result obtained by the electric field up to 0.4 V/nm, which is approaching the breakdown strength of common dielectrics. Our work offers a new functionality for effectively tuning the magnetization direction of nanoscale bits, without relying on the magnetic field, spin current, or mechanical strain.