A n-Cu2O layer formed a high-quality buried junction with p-Cu2O to increase the photovoltage and thus to shift the turn-on voltage positively. Mott-Schottky measurements confirmed that the improvement benefited from… Click to show full abstract
A n-Cu2O layer formed a high-quality buried junction with p-Cu2O to increase the photovoltage and thus to shift the turn-on voltage positively. Mott-Schottky measurements confirmed that the improvement benefited from a thermodynamic shift of the flat-band potentials. The obtained extremely positive onset potential, 0.8 V (vs. RHE) in n-Cu2O/AuAg/p-Cu2O, is comparable with measurements from water-reduction catalysts. The AuAg alloy sandwiched between the homojunction of n-Cu2O and p-Cu2O improved the photocatalytic performance. This alloy both served as an electron relay and promoted electron-hole pair generation in nearby semiconductors; the charge transfer between n-Cu2O and p-Cu2O in the sandwich structure was measured with X-ray absorption spectra. Acting as a plasmonic photosensitizer, the alloy increased the efficiency of conversion of solar energy to electric current. The mechanism of plasmonic energy transfer involved a direct transfer of the plasmonic hot carriers; the interfacial Schottky barrier height modulated the plasmonic hot electron transfer. This facile sandwich structure combines both electrical and optical functions of alloy nanoparticles into a single structure, which has implications for the design of efficient devices to harvest solar energy.
               
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