LAUSR

We reported a three-valued nonvolatile memory device capable of low energy consumption operations based on the switching of open-circuit voltages. This device consists of a stack of Li, Li3PO4 solid electrolyte, and Ni electrode films. We observed reversible voltage switching between high, intermediate, and low open-circuit voltages. According to the scaling law, the energy required to switch a device was estimated to be 8.8 × 10-11 J/μm2; this value is almost 1/50 of that of a typical DRAM. Both the high- (1.80 V) and low- (0.95 V) voltage states converged to the intermediate-voltage (1.35 V) state, indicating that the intermediate-voltage state is the most stable metastable state.