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Memory stacks for charge trapping cells have been produced exploiting Al-doped HfO2, Al2O3, and SiO2 made by atomic layer deposition. The fabricated stacks show superior stability and electrical ch... Click to show full abstract
Memory stacks for charge trapping cells have been produced exploiting Al-doped HfO2, Al2O3, and SiO2 made by atomic layer deposition. The fabricated stacks show superior stability and electrical ch...
Keywords:
oxide thickness;
equivalent oxide;
sub equivalent;
hfo2;
stability;
memory
Journal Title: ACS Applied Nano Materials
Year Published: 2018
Link to full text (if available)
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Journal Title: ACS Applied Nano Materials
Year Published: 2018
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!