LAUSR.org creates dashboard-style pages of related content for over 1.5 million academic articles. Sign Up to like articles & get recommendations!

Mid-Infrared Intraband Photodetector via High Carrier Mobility HgSe Colloidal Quantum Dots.

Photo from wikipedia

In this work, a room-temperature mixed-phase ligand exchange method is developed to obtain a relatively high carrier mobility (∼1 cm2/(V s)) on HgSe intraband colloidal quantum dot solids without any… Click to show full abstract

In this work, a room-temperature mixed-phase ligand exchange method is developed to obtain a relatively high carrier mobility (∼1 cm2/(V s)) on HgSe intraband colloidal quantum dot solids without any observable trap state. What is more, the doping from 1Se to 1Pe state in the conduction band could be precisely controlled by additional salts during this method, proved by optical and transport experiments. The high mobility and controllable doping benefit the mid-infrared photodetector utilizing the 1Se to 1Pe transition, with a 1000-fold improvement in response speed, which is several μs, a 55-fold increase in responsivity, which is 77 mA/W, and a 10-fold increase in specific detectivity, which is above 1.7 × 109 Jones at 80 K. The high-performance photodetector could serve as an intraband infrared camera for thermal imaging, as well as a CO2 gas sensor with a range from 0.25 to 2000 ppm.

Keywords: carrier mobility; mobility; colloidal quantum; intraband; photodetector; high carrier

Journal Title: ACS nano
Year Published: 2022

Link to full text (if available)


Share on Social Media:                               Sign Up to like & get
recommendations!

Related content

More Information              News              Social Media              Video              Recommended



                Click one of the above tabs to view related content.