LAUSR

Complementary metal oxide semiconductor (CMOS) silicon sensors play a central role in optoelectronics with widespread applications from small cell phone cameras to large-format imagers for remote sensing. Despite numerous advantages, their sensing ranges are limited within the visible (0.4–0.7 μm) and near-infrared (0.8–1.1 μm) range , defined by their energy gaps (1.1 eV). However, below or above that spectral range, ultraviolet (UV) and short-wave infrared (SWIR) have been demonstrated in numerous applications such as fingerprint identification, night vision, and composition analysis. In this work, we demonstrate the implementation of multispectral broad-band CMOS-compatible imagers with UV-enhanced visible pixels and SWIR pixels by layer-by-layer direct optical lithography of colloidal quantum dots (CQDs). High-resolution single-color images and merged multispectral images were obtained by using one imager. The photoresponse nonuniformity (PRNU) is below 5% with a 0% dead pixel rate and room-temperature responsivities of 0.25 A/W at 300 nm, 0.4 A/W at 750 nm, and 0.25 A/W at 2.0 μm.