LAUSR

Van der Waals (vdWs) heterostructures have provided a platform for nanoscale material integrations and enabled promise for use in optoelectronic devices. Due to the ultra-strength of two-dimensional materials, strain engineering is considered as an effective way to tune their band structures and further tailor the interface performance of vdWs heterostructures. However, the less-constrained vdWs interfaces make the traditional strain technique via lattice-mismatched growth infeasible. Here, we report a strategy to construct mixed-dimensional heterostructure arrays with periodically strain-engineered vdWs interfaces utilizing one-dimensional semiconductor-induced nanoindentation. Using monolayer MoS2 (1L-MoS2)/ZnO heterostructure arrays as a model system, we demonstrate inhomogeneous built-in strain gradient at the heterointerfaces ranging from 0 to 0.6% tensile. Through systematic optical characterization of the hybrid structures, we verify that strain can improve the interfacial charge transfer efficiency. Consequently, we observe that the photoluminescence (PL) emission of 1L-MoS2 at strained interfaces is dramatically quenched more than 50% with respect to that at unstrained interfaces. Furthermore, we confirm the strain-optimized interfacial carrier behavior is attributed to the reduction of interfacial barrier height, which is originated from the strain-dependent Fermi level of 1L-MoS2. These results demonstrate that strain provides another degree of freedom in tuning the vdWs interface performance and our method developed here should enable flexibility in achieving more sophisticated vdWs integration via strain engineering.